the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. thyristors AC03DSMA,ac03fsma 3 a mold isolated triac data sheet document no. d17165ej3v0ds00 (3rd edition) (previous no. sc-2105) date published june 2004 ns cp(k) printed in japan 1988 the mark shows major revised points. description the AC03DSMA and ac03fsma are all diffused mold type triac granted rms on-state current 3 a, with rated voltages up to 600 v. features ? isolated plastic package (modified to-220ab) ? 30 a surge current applications ? motor speed control ? lamp dimmer, temperature controllers ? various solid state switches, etc. maximum ratings parameter symbol AC03DSMA ac03fsma unit remarks non-repetitive peak off-state voltage v dsm 500 700 v ? repetitive peak off-state voltage v drm 400 600 v ? rms on-state current i t(rms) 3 (t c = 109c) a refer to figure 11 and 12 . surge on-state current i tsm a refer to figure 2 . 30 (50 hz 1 cycle) 33 (60 hz 1 cycle) fusing current i t 2 dt 4 (1 ms t 10 ms) a 2 s ? critical rate rise of on-state current di t /dt 40 a/ s ? peak gate power dissipation p gm 3 (f 50 hz, duty 10%) w ? average gate power dissipation p g(av) 0.3 w ? peak gate current i gm 0.5 (f 50 hz, duty 10%) a ? junction temperature t j ? 40 +125 c ? storage temperature t stg ? 55 +150 c ? package drawing (unit: mm) 10.5 max. 7 ?.2 3.2 ?.2 3.0 max. 1.3 ?.2 0.8 ?.1 2.54 typ. 2.54 typ. 1.5 ?.2 5 ?.2 13.5 min. 12 ?.2 5 ?.1 17 ?.2 2.8 ?.2 4.7 max. 2.5 ?.1 0.5 ?.1 123 triac 1: t 1 2: t 2 3: gate standard weight: 2 g * * : t c test bench-mark
data sheet d17165ej3v0ds 2 AC03DSMA,ac03fsma electrical characteristics (t j = 25 c) parameter symbol conditions min. typ. max. unit remarks repetitive peak off-state current i drm v dm = v drm t j = 25c ? ? 100 a ? t j = 125c ? ? 1 ma ? on-state voltage v tm i tm = 5 a ? ? 1.8 v refer to figure 1 . gate trigger current mode i i gt v dm = 12 v, t 2 +, g+ ? ? 12 ma refer to figure 4 . ii r l = 30 ? t 2 ? , g+ ? ? ? iii t 2 ? , g ? ? ? 12 iv t 2 +, g ? ? ? 12 gate trigger voltage mode i v gt v dm = 12 v, t 2 +, g+ ? ? 1.5 v refer to figure 4 . ii r l = 30 ? t 2 ? , g+ ? ? ? iii t 2 ? , g ? ? ? 1.5 iv t 2 +, g ? ? ? 1.5 gate non-trigger voltage v gd t j = 125c, v dm = 2 1 v drm 0.2 ? ? v ? holding current i h v dm = 24 v, i tm = 5 a ? 10 ? ma ? critical rate rise of off-state voltage dv/dt t j = 125c, v dm = 3 2 v drm ? 100 ? v / s ? commutating critical rate rise of off-state voltage (dv/dt)c t j = 125c, (di t /dt)c = ? 1.6 a/ms, v d = 400 v 5 ? ? v / s ? thermal resistance note r th(j-c) junction to case ? ? 4.5 c/w refer to figure 13 . r th(j-a) junction to ambient ? ? 65 c/w note the thermal resistance at 50 hz and 60 hz sine wa ve current, which is shown on the follow expression. r th(j-c) = ) av ( t c (max) j p t t ? t j(max) : maximum junction temperature t c : case temperature p t(av) : average on-dissipation
data sheet d17165ej3v0ds 3 AC03DSMA,ac03fsma typical characteristics figure 1. i t vs. t characteristic figure 2. i tsm rating i t - on-state current - a 100 10 1.0 0.1 0 2.0 4.0 max. t j = 25?c 125?c i tsm - surge on-state current - a 35 30 25 20 15 10 5 0 110 5 50 100 0 n = 1 60 hz 50 hz 2 initial t j = 125?c t - on-state voltage - v cycles - n figure 3. v g vs. i g rating figure 4. v gt vs. i gt characteristic v g - gate voltage - v 10 8 6 4 2 0 0 0.6 0.5 0.4 0.3 0.2 0.1 p gm = 3 w f 50 hz duty 10% p g(av) = 0.3 w i gm = 0.5 a t j = ? 40 to +125?c v gt - gate trigger voltage - v 4 3 2 1 0 040 30 20 10 mode i, iii, iv trigger mode i, iii, iv t j = ? 40?c 25?c 125?c i g - gate current - a i gt - gate trigger current - ma figure 5. i gt vs. t a characteristic figure 6. v gt vs. t a characteristic i gt - gate trigger current - ma 100 10 1 0.1 ? 40 ? 20 140 120 100 80 60 40 20 0 mode i, iii, iv v gt - gate trigger voltage - v 2.0 1.5 1.0 0.5 0 ? 40 ? 20 140 120 100 80 60 40 20 0 mode i, iii, iv t a - ambient temperature - c t a - ambient temperature - c
data sheet d17165ej3v0ds 4 AC03DSMA,ac03fsma figure 7. i gt vs. characteristic figure 8. gt vs. characteristic i gt - gate trigger current - ma 1000 100 10 1 0.1 1 1000 100 10 mode i, iii, iv t a = 25?c gt - gate trigger voltage - v 5 4 3 2 1 0 1 1000 100 10 mode i, iii, iv t a = 25?c - pulse width - s - pulse width - s figure 9. i h vs. t a characteristic figure 10. p t(av) vs. i t(rms) characteristic i h - holding current - ma 100 10 1 0.1 ? 40 ? 20 100 80 60 40 20 0 6 5 4 3 2 1 0 06 5 4 3 2 1 t a - ambient temperature - c p t(av) - on-state average power dissipation - w i t(rms) - rms on-state current - a figure 11. t c vs. i t(rms) rating figure 12. t a vs. i t(rms) rating t c - case temperature - c 140 120 100 80 60 40 20 0 06 5 4 3 2 1 t a - ambient temperature - c 140 120 100 80 60 40 20 0 0 2.0 1.0 i t(rms) - rms on-state current - a i t(rms) - rms on-state current - a
data sheet d17165ej3v0ds 5 AC03DSMA,ac03fsma figure 13. z th characteristic z th - transient thermal impedance - c/w 10 2 10 1 10 0 10 ? 1 10 ? 1 10 5 10 4 10 3 10 2 10 1 10 0 junction to ambient junction to case cycles (50 hz)
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